Acceptance and research of transition metallic oxides with low-temperature technology

The main element of the micro and nanoceprinter devices and structures is very thin dielectric, with special requests. It should be: very thin, Undefined, large dielectric penetration and breakthrough voltage, etc. These conditions are most likely to meet the transition metallic oxides, including hafnium oxide. The modern technology of oxides is a high temperature that leads to eradication of defects, reduction of break-up voltage, etc. All these are negative effect on the oxide and for the device parameters. The process of plasma anodation technologically stimulated by low-temperature, ultraviolet light formation of Hafnium oxide is reviewed in which electro-physical and dielectric parameters of oxide films are improved. The objective is to assume the content of the individual technological processes. The kinetics of film reception is considered, and the temperature and photon " Burn out " are done and its parameters are measured. It is shown that oxidative films obtained from the stimulated plasma anodic technology can be used in the production of micro and nano devices.