Receive and research of multi-layered memristor with active layers

Author: Lado Jibuti
Keywords: Plasma anodizing, UV light, oxide
Annotation:

In this work is given technological processes of receiving memristor with active layer of Hf oxide and research of its physical properties. Hf oxide was received using plasma anodizing method, stimulation of which was realized using UV light exposure on the wafer directly during anodizing process. Technological route of receiving memristor was developed. Some electro-physical, dielectrical and optical features of received Hf oxide were studied. Different objectives, such as formation of Ohmic contacts on both sides of the active layer for measuring capacitance-voltage (C-V) and current-voltage (I-V) characteristics, where achieved. Measurement results were summarized and relevant conclusions were made.