the growth and analysis of of gallium nitride films produced by low temperature magnetron sputtering

Author: bakar duadze
Keywords: wide-band-gap, Gallium, nitride, sputtering, magnetron
Annotation:

Structures created on the basis of a wide-band-gap semiconductor compound GaN are considered as one of the perspective materials for the creation of high frequency transistors, monolithic integral schemes, laser and light emitting diodes. These devices work in a high frequency range, at high temperatures and also with greater power output than the Si, GaAs, SiC and other semiconductors. Their use in modern radioelectric devices significantly increases the level of integration, enhancement, modulation and other basic parameters. The main purpose of LED technology is to create a light source in the entire range of white colors to use LEDs in color devices: indicators, screens, etc. In the presented work is studed the deposition of GaN films on sapphire using low-temperature magnetron sputtering technology. In the process of growing GaN films simultaneously it was doped with copper and were measured some parameters of the obtained films.